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SI3422DV
New Product
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
200
rDS(on) (W)
5 @ VGS = 10 V
ID (A)
"0.42
(1, 2, 5, 6) D
TSOP-6 Top View
1 6 (3) G
3 mm
2
5
3
4 (4) S N-Channel MOSFET
2.85 mm
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IAS EAS IS PD TJ, Tstg
5 secs
200 "20 "0.42 "0.34
Steady State
Unit
V
"0.31 "0.25 "0.75 "0.75 0.028 "1 mJ A 1.14 0.73 -55 to 150 _C W A
2.1 1.34
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71098 S-99344--Rev. A, 22-Nov-98 www.vishay.com S FaxBack 408-970-5600 t v 5 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
50 90 35
Maximum
60 110 42
Unit
_C/W
2-1
SI3422DV
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 160 V, VGS = 0 V VDS = 160 V, VGS = 0 V, TJ = 55_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 0.35 A VDS = 15 V, ID = 1 A IS = 1 A, VGS = 0 V 10 1.2 0.75 5 2 "100 1 25 V nA mA A W S V
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamicb
Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 1 A, di/dt = 100 A/ms VDD = 100 V, RL = 100 W V, ID ^ 0.75 A, VGEN = 10 V RG = 6 W 0 75 A V, VDS = 100 V VGS = 10 V ID = 0 5 A V, V, 0.5 2.1 0.5 0.9 8 8 9 30 130 13 13 15 50 210 ns 3.4 nC C
Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
1.5 VGS = 10 thru 8 V 7V 125_C I D - Drain Current (A) 1.0 I D - Drain Current (A) 1.0 1.5 TC = -55_C 25_C
Transfer Characteristics
6V 0.5 5V 4V 0 0 2 4 6 8 10
0.5
0 0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)
www.vishay.com S FaxBack 408-970-5600
2-2
Document Number: 71098 S-99344--Rev. A, 22-Nov-98
SI3422DV
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
8 r DS(on) - On-Resistance ( W ) 120
Vishay Siliconix
Capacitance
100 6 VGS = 10 V C - Capacitance (pF)
80 Ciss 60
4
40 Coss Crss
2 20
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0 0 20 40 60 80 100
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
Gate Charge
20 V GS - Gate-to-Source Voltage (V) VDS = 100 V ID = 0.5 A 16 2.5
On-Resistance vs. Junction Temperature
VGS = 10 V ID = 0.35 A 2.0
12
r DS(on) - On-Resistance (W) (Normalized) 2 3 4
1.5
8
1.0
4
0.5
0 0 1 Qg - Total Gate Charge (nC)
0 -50
-25
0
25
50
75
100
125
150
TJ - Junction Temperature (_C)
Source-Drain Diode Forward Voltage
10 20
On-Resistance vs. Gate-to-Source Voltage
I S - Source Current (A)
1
r DS(on) - On-Resistance ( W )
TJ = 150_C
16
12 ID = 0.35 A 8
0.1 TJ = 25_C 0.01
4
0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V)
0 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V)
Document Number: 71098 S-99344--Rev. A, 22-Nov-98
www.vishay.com S FaxBack 408-970-5600
2-3
SI3422DV
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
0.6 20
Single Pulse Power
0.3 V GS(th) Variance (V) ID = 250 mA Power (W) 0.0
16
12 TA = 25_C 8
-0.3
-0.6
4
-0.9 -50
-25
0
25
50
75
100
125
150
0 10-3
10-2
10-1
1
10
100
600
TJ - Temperature (_C)
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2 1 Duty Cycle = 0.5
Normalized Effective Transient Thermal Impedance
0.2
Notes:
0.1 0.1 0.05
t1 PDM
0.02
t2 1. Duty Cycle, D =
2. Per Unit Base = RthJA = 90_C/W
t1 t2
Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec)
3. TJM - TA = PDMZthJA(t) 4. Surface Mounted
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2 1 Duty Cycle = 0.5
Normalized Effective Transient Thermal Impedance
0.2 0.1 0.1 0.05 0.02
Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10
www.vishay.com S FaxBack 408-970-5600
2-4
Document Number: 71098 S-99344--Rev. A, 22-Nov-98

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